p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 6 0 g a t e - s o u r c e v o l t a g e - c o n t i n u o u s v g s 2 0 d r a i n c u r r e n t - c o n t i n u o u s ( n o t e : 1 ) 3 0 0 - p u l s e d 8 0 0 p o w e r d i s s i p a t i o n ( n o t e 1 ) p d 3 5 0 m w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t r t h ja 3 5 7 / w j u n c t i o n t e m p e r a t u r e t j 1 5 0 j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v i d m a s m d ty p e m o s f e t 1 1.base 2.emitter 1 g a t e 2 s o u r c e 3 d r a i n w w w . k e x i n . c o m . c n features low on-resistance : r ds(on) low gate threshold v oltage low input capacitance f as t s w it c hin g s pee d low input/output leakage 2n7 00 2 k absolut e maximum r atings ta=25 electrical characteristic s ta = 25 markin g notes: 1. device mounted on fr-4 pcb. note: 2. short duration test pulse used to minimize self-heating ef f ect. mark in g 702 . n-cha nne l enha nc e m e nt mo s f e t e s d p r otec ted 2k v hb m p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage ( note.2) v d s s i d = 100 a , v g s = 0v 60 v z er o g ate v ol tage dr ai n cur r ent ( note.2) i d s s v d s = 60v , v g s = 0v 1 a g ate- b ody leak age cur r ent ( note.2) i g s s v d s = 0v , v g s = 20v 10 ua g ate t hr es hol d v ol tage ( note.2) v g s ( t h ) v d s = v g s , i d = 250 a 1 1.6 2.5 v v g s = 10v , i d = 500m a 2 v g s = 10v , i d = 50m a 3 f or w ar d t r ans fer a dm i ttanc e ( note.2) | y f s | v g s = 10v , i d = 200m a 80 m s input capac i tanc e c i ss 50 o utput capac i tanc e c o ss 25 rev er s e t r ans fer capac i tanc e c r ss 5 t otal g ate char ge q g v g s = 4.5v , v d s = 15v , i d = 200m a 0.8 nc t ur n- o n del ay t i m e t d ( o n ) 20 t ur n- o ff del ay t i m e t d ( o f f ) 40 s tati c dr ai n- s our c e o n- res i s tanc e ( note.2) r d s ( o n ) pf ns i d = 200m a , v d s = 30v , r g = 10 ,v g e n = 10v ,r l = 150 v g s = 0v , v d s = 25v , f= 1m hz source gate protection diode gate d ra i n 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1
0 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 v drain-source vol t age (v) fi g . 1 t ypical output characteristics ds , ) a ( t n e r r u c n i a r d i d , 1.2 1 .4 3v 4v 6v 8v 10v v = 10v 8v 6v 5v 4v 3v gs 5v v , ga te-source vol t age (v) fi g . 2 t ypical t ransfer characteristics gs 0.01 0.10 1 . 00 1 1.5 2 2.5 3 3.5 4 4.5 5 , i d ) a ( t n e r r u c n i a r d t = 125 c a t = 25 c a t = -25 c a t = 75 c a v = 10v pulsed ds t , channel tempera ture (c) fig. 3 gate threshold v olt age vs. channel t em p erature ch 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 ) v ( e g a t l o v d l o h s e r h t e t a g v , ) h t ( s g v = 10v i = 1ma pulsed ds d 0.1 i drain current (a) fig. 4 s t atic drain-source on-resist ance vs. drain current d , 1 10 0.001 0.01 0.1 1 t = 150 c a t = 125 c a t = 85 c a t = -55 c a t = 25 c a t = 0 c a t = -25 c a v = 10v pulsed gs s m d ty p e m o s f e t 2 w w w . k e x i n . c o m . c n 2 n 7 0 02 k 1 i , drain current (a) fig. 5 s t atic drain-source on-resist ance vs. drain current d 10 0.1 1 0.001 0.01 0.1 v = 5v pulsed gs t = 150 c a t = 125 c a t = 85 c a t = -55 c a t = 25 c a t = -25 c a t = 0 c a 0 v ga te source vol t age (v) fig. 6 s t atic drain-source on-resist ance vs. gate-source v olt a g e gs, 1 2 3 4 5 6 7 0 2 4 6 8 10 12 14 16 18 20 i = 300ma d i = 150ma d t = 25 c pulsed a t y p i c a l c h a r a c t e r i s ti c s
) a ( t n e r r u c n i a r d e s r e v e r , i r d 0.001 0.01 0.1 1 0 0.5 1 1.5 v , fig. 8 reverse drain current vs. source-drain v olt a g e sd source-drain vol t age (v) v = 0v pulsed gs t = -55 c a t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = 0 c a t = -25 c a 0 t ch, channel tempera ture ( c) fig. 7 s t atic drain-source on-s t ate resist ance vs. channel t em p erature 0.5 1 1.5 2 2 .5 -75 -50 -25 0 25 50 75 100 125 150 v = 10v pulsed gs i = 300ma d i = 150ma d 1 i , drain current (a) d fig.10 forward t ransfer admitt ance vs. drain current ) s ( e c n a t t i m d a r e f s n a r t d r a w r o f , | y | s f 0.001 0.01 0.1 0.001 0.01 0.1 1 v = 10v pulsed gs t = 25 c a t = a -55 c t = a 150 c t = a 85 c 1 0.001 0.01 0.1 1 0 0.5 ) a ( t n e r r u c n i a r d e s r e v e r , i r d v , fig. 9 reverse drain current vs. source-drain v olt a g e sd source-drain vol t age (v) v = 0v gs v = 10v gs t = 25c pulsed a s m d ty p e m o s f e t 3 w w w . k e x i n . c o m . c n 2 n 7 00 2 k
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